M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control SEMI M55-0315 (designation update)

SEMI M55-0315 (designation update)

The exposure of the various defects found on or in a silicon wafer is often the first critical step in evaluating wafer quality or initiating failure analysis of an errant device structure

which may be integrated circuit (IC) wafers and devices

FPD用ガラス基板のベンダーおよび，あるいは購入者に使用される。

but are not limited to:

M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity StdTpc-Silicon Materials & Process Control SEMI M55-0315 (designation update)This Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www. semiviews. org and www. semi. org in October 2012; originally published July 2002; previously published March 2003. NOTICE: This Document was completely rewritten in 2012. This Test Method describes procedures for characterizing silicon