MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 The purpose of this Standard

The purpose of this Standard effort is to provide a common specification for concepts

This Document does not address the transmission

SEMI F61-0617 (complete rewrite)

This edition was approved for publication by the global Audits and Reviews Subcommittee on April 30

• Protection of the recipes in equipment from non-privileged access by defining protected recipe spaces per purposes

MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 The purpose of this StandardThis Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon. This Test Method can be used for silicon in which the impurity dopant concentrations are between 0. 01 ppba and 5 ppba for each of the electrically active elements. The concentration for each impurity dopant can be obtained by application of Beers Law. Calibration factors are given for