Si (100) 1" dia x 0.5mm, 1SP, N type P doped, R: 1-10 ohm-cm - SIPa25D05C1R1 S Doping: Undoped

Doping:                           Undoped

compact design allows you to put it into the glove box

Surface:            as cut

four high-temperature silicone O-rings (300oC Max

Note: Air Compressor is not included

Si (100) 1" dia x 0.5mm, 1SP, N type P doped, R: 1-10 ohm-cm - SIPa25D05C1R1 S Doping: UndopedSpecifications: Single crystal: Si Conductive type: N type, P doped Size: 1" diameter x 0. 5mm Orientation: (100) resistivities: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater