MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing SEMI E84-0301 (technical revision)

SEMI E84-0301 (technical revision)

originally published November 2007

UV cut performance

mobile ionic charge contamination

health and safety (EH&S) issues associated with their use

MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing SEMI E84-0301 (technical revision)This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS. This Test Method can be used for silicon in which the dopant concentrations are less than 0. 2% (1 atoms cm3 1020 atoms cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0. 0012 cm and 1 cm for p type silicon and