M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching Revision:SEMI M90-0821 - Current A change was made to

A change was made to ¶ 10

This Document covers requirements for carbon tetrafluoride (CF4) used in the semiconductor industry

and professionals with elementary background in science and knowledge of operating computers

本仕様書は，テストパターンの総合的なデザインを規定し，つまり，オーバーレイ計測用の数個の基本パターンの形状，寸法，デザインルール，および配置の際の考慮点（適切な場所）について記述している。これらの標準テストパターンは，光学的な，走査型電子ビーム式の，および他の形式の計測のために使用できる。

SEMI E51-0298 (technical revision)

M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching Revision:SEMI M90-0821 - Current A change was made toThis Standard defines the measurement method for bulk micro defect (BMD) densities and denuded zone (DZ) width in annealed silicon wafers. This Standard describes the preferential etching technique to measure BMD density and DZ width. The BMD and DZ width are one of important characteristic parameters of annealed wafer which has meant the gettering capability. This Standard defines measurement technique of BMD density and DZ width. BMD and DZ form in