P01400 - SEMI P14 - 黒鉛炉原子吸光分光法によるポジティブフォトレジスト中の錫の測定 StdPbc-0421 This reporting can also be

This reporting can also be applied to equipment with process modules

本スタンダードは，global Silicon Wafer Committeeで技術的に承認されている。現版は2005年11月29日，global Audits and Reviews Subcommitteeにて発行が承認された。2006年2月にwww

SEMI M66-0706 (first published)

The specification described here covers physical

Nn grown on monocrystalline wafers of GaAs or InP (other substrates may be considered where appropriate documents exist to describe the specification of the substrate)

P01400 - SEMI P14 - 黒鉛炉原子吸光分光法によるポジティブフォトレジスト中の錫の測定 StdPbc-0421 This reporting can also beNOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. 1: