M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging StdPbc-0117 This Test Method covers techniques

This Test Method covers techniques for determination of the length of the flatted portion of a wafer periphery

Recognize the three main PSI categories and the specific data gathered within them

nondestructive procedure to determine the thickness and flatness of clean

while still maintaining full furnace vacuum and temperature conditions

To flexible displays

M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging StdPbc-0117 This Test Method covers techniquesBasal plane dislocations (BPDs) are detrimental for devices manufactured on 4H SiC substrates, especially for bipolar devices for power electronics. Most BPDs are transformed into threading edge dislocations (TEDs) when growing epitaxial layers on top of 4H SiC substrates, but a small fraction is also transferred into the epitaxial layer or may result in the formation of stacking faults (SFs), both being critical defects potentially causing device