SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm Flow cell test system Model NT00 Voltage 500 V~120KA

Model  NT00  Voltage  500 V~120KA

Product Structure

and papers

and it can be used immediately

Wafer size: 1" dia x 0

SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm Flow cell test system Model NT00 Voltage 500 V~120KASilicon Wafer Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P type) substrate ,2"x0. 279mm, 1 side polished (1sp) SiO2=300 nm Ti=10 nm Pt(111)=150 nm Resistivity: 1 20 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Substrate Size: 2" diameter + 0. 5 mm x 0. 279 mm Polish: one side polished Surface roughness: < 20 A RMS Maximum Thermal Budget of Pt