GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp Target A-Z Coating thickness: ~143 um

Coating thickness: ~143 um

2'' (Outside Diameter * Inner Diameter)

Package:                      under 1000 class clean room

Growing Method:               VGF

05o to M-plane leftwards from the Primary

GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp Target A-Z Coating thickness: ~143 umSpecifications: GaAs single crystal wafer Growing method: VGF Orientation: (110) Size: 2" dia x 0. 35 mm Polishing: One side polished Doping: Si doped Conductor type: S C N Carrier concentration: (1. 20 2. 45)x10^17 cm^3 Mobility: 3380 3970 cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Resistivity: (0. 76 1. 37)x10^ 2 ohm. cm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces