InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Warning: Please always clean the

Warning: Please always clean the machine after each use

4543 b = 5

Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films

Semi-Conducting

uniform temperature zone

InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes Two Dimensional Crystal Warning: Please always clean theGrowth method LEC Orientation (511) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side