GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters single-phase

single-phase

Co-axis Nozzle

4 @ 300K  at A axis

(Note: MTI does not carry a warranty for the Laptops

Dislocation Density           <5x106cm-2

GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters single-phaseGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Sizes 2 Round Dimensions 50. 8mm + 0. 25mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Substrate Sapphirethickness: 0. 43mm+ 0. 025mm Conduction Type: N