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Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>10000 ohm.cm LaAlO3 WIFI Option
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Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>10000 ohm.cm LaAlO3 WIFI Option
$107.56
Description
WIFI Option
Lattice Constant: a=12
Conductor type: P-type
Click the picture to see detail Instruction
No any Electric part for safe operation
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>10000 ohm.cm LaAlO3 WIFI OptionThermal oxide Layer Research Grade , about 80 % useful area One side SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type un dped Resistivity: >10000 ohm. cm Size: 4"dia + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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