GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3 Analyzers & Testers Manual control over the current

Manual control over the current provides a faster initial heating up but might lose accuracy during the temperature holding

Size:               2" Dia x 0

EPD:                            <8000/cm^2

& 2016 coin cells

polymer component

GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3 Analyzers & Testers Manual control over the currentHigh quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0. 45mm, Orientation: (100) Dopping: Zn doped, Conducting type: P type. Carrier concentration: (5. 8)x10^18 cm^ 3 Resistivity: 3. 9 x10^ 3 ohm. cm EPD: < 2x 10^3 cm ^ 2 Mobility: 270 cm^2 V. S Polish: one side polished. Grown by a special LEC technique Surface finish (RMS or Ra) : < 5A Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3