Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US DyScO3 The shape of the electrodes

The shape of the electrodes it produces is also handy for the later processing steps such as tab welding by MSK-800 and electrode stacking by MSK-111A

Name Qty 1 CIP pressing die 1 set 2 Black Rubber Rings O

Application Notes Please click here to learn  how to use and maitain Alumina tube in MTI high temperature tube furnace

please order it accordingly

Temperature Accuracy

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US DyScO3 The shape of the electrodesGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A