GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um Orientation 111 Thermal Expansion: 7

Thermal Expansion: 7

NRTL or CSA certification is available upon request at extra cost

One electric strip built-in chamber allows the use of electricity inside the chamber

the PTFE flange may melt off if the furnace temperature is higher than 500ºC

1kw) Water flow rate: 60 liter/minute Water tank capacity

GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um Orientation 111 Thermal Expansion: 7GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Sizes 5mmx5mm Substrate Sapphire, Orientation R (00. 1) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown Back Surface