Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm Ca 5") produces a smooth and

5") produces a smooth and efficient cut for rare and valuable materials with minimum material loss

PTFE features high-performance anti-corrosion and higher thermal resistance up to 200°C (< 10mins)

NRTL or CSA certification is available upon request at extra cost

Shipped in the vacuum bag

This product is not manufactured by MTI

Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm Ca 5") produces a smooth andNickel Metallic Film Nickel Thickness: 100nm Film Crystallinity: (111) oriented polycrystals Roughness, RMS: N A Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 4" diameter + 0. 5 mm x 0. 525 + 0. 025 mm th Orientation: (100) + 0. 5o Polish: One sides polished Surface roughness: Prime Packing: Vacuum packed on a 4" single wafer carrier Optional: you may need tool below to handle the wafer ( click