4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um Ge epi-film on Si A vacuum gauge is built

A vacuum gauge is built in for easy monitoring of the vacuum level

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4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um Ge epi-film on Si A vacuum gauge is builtSpecifications Film: 4H SiC (0001) Film target thickness: 11 um with (thickness acceptation range) + 10% Conductive Type P type with Carrier concentration: (0. 3~ 1. 9)E16 cc Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom Substrate: 4H SiC (0001) Prime grade Off axis: miscut 4. 0 + 0. 5 degree Prime Grade: with FWHM 20 arc second OF orientation: parallel {10 10} + 5