50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3"> 50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3"> 50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3 – surdyk.pl

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Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3

$120.75

Quantity
50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3">
Description

6) E18 /cm^3

1220°C ~ 1500°C (in H2)

Single crystal CdWO4

Optional digital meter with alarm

The additional advantage is quite convenient in the process of cleaning and assembling

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy 6) E18 /cm^3Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,

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