Si Wafer (100) 2" dia x 0.5mm, 1SP, P type, R:0.1-1.0 ohm.cm Target A-Z Growing Method: VGF

Growing Method:               VGF

Made of high-purity machinable alumina with stainless steel bases

Typical Operation Procedures for Controlling the Pressure of Tube Furnace  Install feed valve (inlet) on one end of tube flange

therefore old elements can be used together with new ones

Carrier concentration:      <1012/cm 3

Si Wafer (100) 2" dia x 0.5mm, 1SP, P type, R:0.1-1.0 ohm.cm Target A-Z Growing Method: VGFSingle crystal Si Conductive type: P type ( B doped) Resistivity: 0. 1 1. 0 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 2" diameter x 0. 5mm Orientation: (100) Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw