Si (100) 10x10x0.5mm, 1SP, P type B doped, R:1-10 ohm-cm GaAs temperature resolution is ±3
$17.52
Description
temperature resolution is ±3
It can prevent the precision and brittle crystal wafer from damage and contamination during shipping and storing
83") Analog-to-digital technique Dual slope Internal resolution 15 bits Read rate 3/sec Polarity Automatic Max error process ±0
This is high-temperature silicone rubber O-ring is for DZF-6020 Floor-Stand Large Vacuum Oven
folding and ironing the edge of the pouch cell case
Si (100) 10x10x0.5mm, 1SP, P type B doped, R:1-10 ohm-cm GaAs temperature resolution is ±3Specifications: Single crystal: Si Conductive type: P type, B doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x10 x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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