2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm Tube Furnaces Limited threshold conditions include voltage

Limited threshold conditions include voltage

It can be removed the NiO by annealing in the hydrogen furnace

Thin Film from A-Z

All pressing dies are made of high-stretched carbon steel to achieve high hardness to meet the essential requirements of making ceramic or metal samples

Change in Current: Upto 10mA

2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2" dia x0.35mm,2sp,Film:750 nm Tube Furnaces Limited threshold conditions include voltage2" dia. wafer InGaAs EPI on InP (Semi insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi Insulating Wafer size: 2" diameter x 0. 35 mm Both sides polished EPI Film : Lattice matched In Ga alloy layer of N type InGaAs(undoped) Film Thickness : 0. 75 um (+ 20%) Roughness of epi layer is close to 1 mono layer (ML) One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as