Boron-Doped Diamond on Silicon Substrate Orientation 10-10 Growth Method: CZ

Growth Method: CZ

It can prevent precision wafer or substrate from damage and contamination during shipping and storage

3/8" OD larger diameter Alumina tube is made by high purity 99

and charge algorithms

Working Voltage 110 or 220V AC

Boron-Doped Diamond on Silicon Substrate Orientation 10-10 Growth Method: CZA Boron Doped Diamond (BDD) on Silicon Substrate (Si) is a high performance material that combines the excellent properties of diamond with the versatility of silicon. The substrate consists of a conductive silicon wafer that is coated with a thin layer of boron doped diamond. Boron doping introduces p type conductivity to the diamond layer, enhancing its electrical properties and making it suitable for use in electrochemical applications. This