film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag"> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag"> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag"> Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Compliance CE certified – surdyk.pl

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Compliance CE certified

$228.85

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Description

Compliance CE certified

Each complete set includes three parts

5mm(ID) x 49mm(H)

Dual needle valves allow the simple

This is fixed thickness precision film applicator with four paths of 5

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Compliance CE certifiedSpecifications: Cu coated SiO2 Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag

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