10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side"> 10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side"> 10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side"> InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La 5"thickness (900 x 600 x – surdyk.pl

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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La 5"thickness (900 x 600 x

$126.50

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Description

5"thickness (900 x 600 x 60 mm

To use outside the glove box

Please do not over tighten the three hex screws on the flanges to avoid overpressure incidents

ready for GSL-1100X-SPC12

Mass resistivity: 0

InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La 5"thickness (900 x 600 xGrowth method LEC Orientation (411) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side

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