GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film a two-stage pressure regulator(pic1) must

a two-stage pressure regulator(pic1) must be installed on the gas cylinder to limit the pressure within the required working range for safe operation

16 pins electrical feed through outside the glove box

Time Range: 365 * 24 hours

If you have any questions on IP conflict

A vacuum pen for easy component placement and cell assembly ( click Pic

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film a two-stage pressure regulator(pic1) mustGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 3" dia x 0. 625mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (1. 06 3. 96) x 10^18 cm^3 Mobility: 1420 2480 cm^2 V. S Resistivity: (1. 1 2. 38) E 3 ohm. cm EPD: <1000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces