Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery 01 increments

01 increments

Size Click to enlarge the picture below for detailed size

No power source is available inside the glove box and the customer needs to extend the power cord to the outside of the glovebox

The micrometer head's controllable accuracy is 10 microns

and customer’s responsibility

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery 01 incrementsSingle Crystal: Si Growth Method: FZ (Floating Zone) Type Dopant: N Phosphorus Orientation: (111) Resistivity: 15,000 25,000 ohm cm Diameter: 100 mm + 0. 5 mm Thickness: 0. 3 mm + 0. 025 mm Primary Flat: <110> Polish: One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater