A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier"> InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Item: Reducing Union – surdyk.pl

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InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Item: Reducing Union

$931.50

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Item: Reducing Union

Special Phenyl silicones can be used down to -148°F

The round side door on each side for easy access to the flange on the furnace

Conductive type:        Si   P- type

Good lattice match with perovskite structure superconductors

InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished CdS Item: Reducing Union2" InSb wafer (N type, Te doped) Size: 2" dia x 0. 5mm thick with thickness tolerance + 25 um Orientation <111>A + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method CZ Orientation (111) A + 0. 5o Orientation Flat <0 1 1> .<0 11> Doping Te doped Conductivity type N type Resistivity: (1. 1 3. 3) E 4 ohm. cm Carrier

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