coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag"> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag"> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag"> Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp High Purity Chemical A-Z One stainless steel sleeve is – surdyk.pl

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp High Purity Chemical A-Z One stainless steel sleeve is

$228.85

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Description

One stainless steel sleeve is in outside to protect die from cracking

The slot die heads are available in 50mm or 100mm widths with optional thickness shims

Polyfluortetraethylene (PTFE) needle valve with 1/4" tube fitting

Lattice constant at room temperature :   0

Orientation:              (100)+/-2 degree

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp High Purity Chemical A-Z One stainless steel sleeve isSpecifications: Cu <111> coated Si Wafer (4 inch size) Thickness of highly oriented polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia x0. 525 mm thickness Si wafer (Prime Grade) with thermal oxide: 300 nm thk P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , N A Package: One 1000 class clean room with 100 class plastic bag

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