Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws -Thickness of highly oriented polycrystalline

-Thickness of highly oriented polycrystalline Mo <110> film: 500 nm on one side

5" Diamond Particles Grit 280 mesh ( 40 microns) Note  If you try to cut non-ferrous metal or alloy

Polished surface:   substrate surface is EPI polished via a special CMP procedure with Ra < 5 A

How to mount 86mm dicing blade

Weight       12Oz (340 grams) Operation Temperature  Charging:       0 - 45 oC (32 - 113 o F)

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.5 um thick Saws -Thickness of highly oriented polycrystallineSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for