VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm Testing Cells when operating in the glove

when operating in the glove box

OD:    80 mm

Composition:    Ge single crystal

95 Discharging Capacity at First Cycle (mAh/g)

Sutface Roughness:   CMP polished with min

VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm Testing Cells when operating in the gloveGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: One side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Conductor type: N type Resistivity: 0. 088 0. 183 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier concentration: (0. 78 3. 02)x10^16 c. c Mobility: 2350 3010 cm^2. v.