Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm Sc such as Nylon jars and

such as Nylon jars and grinding balls

The Banana Plug of the cable are 4mm banana plug

Application Notes The pressing die cannot be used for pressing powder with particle size < 30 microns

NCM622 electrode sheet

Conductor type: P-type

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm Sc such as Nylon jars andGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A