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GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5 Ba0.5Sr0.5TiO3 Overall Dimensions

$227.12

Quantity
Description

Overall Dimensions

Package: sold in 20 pcs per box

Die Set Material Hardened Steel

Replacement Purchase spare parts springs or micrometer heads for replacement

Application for connection to Compact Direct Read Flow Meter

GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5 Ba0.5Sr0.5TiO3 Overall DimensionsGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 3" dia x 0. 5mm Polishing: Two sides polished Doping: Zn doped Conductor type: P type Carrier Concentration: (1. 3 1. 4)E19 cm^3 Mobility: 71 74 cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Resistivity : (6. 1 6. 6)x10^ 3ohm. cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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