GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp Ge epi-film on Si Single crystal CsPbBr3

Single crystal  CsPbBr3

100 pcs of CR2450 button cell cases

Polish:            two sides optical polished

Chamber:  300mmD x 200mmW x 120mmH (12"D x 8"W x 6"H)

Thermal Couple:             K Type

GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp Ge epi-film on Si Single crystal CsPbBr3Wafer Specifications:. Size: 5x5 x 0. 5mm, Orientation: (100) Dopping: undoped, Conducting type: P type. Polish: one side polished by CMP Packing: 1000 class clean room in a single wafer container Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3 Melting point: 710 oC Grown by a special LEC technique , EPD :<10^4 cm2. Carrier concentration: ( 1 2)x10^17 cm^ 3 Mobility: 600 700 cm^2 Vs EPD <3000 cm^ 2 Thermal Expansion: 6. 1