Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode Stainless steel bottom contact plate

Stainless steel bottom contact plate and top plunger ensure good electrical conductivity

0) is included to set various working modes for measuring capacity and lifecycle for all types of rechargeable batteries

item is sold in quantities of 1 pc for the unit price shown

mso-pagination:none

Surface finish:  One side optical polished < 100A

Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode Stainless steel bottom contact plateAluminum Metallic Film Film coated by E beam evaporation under vacuum below 10 6 torr evaporation rate: 0. 2 nanometer per second Aluminum Thickness: 3 microns Film Resistivity: 2. 65 micro ohm cm Film Crystallinity: Weak (111) oriented polycrystals Roughness, RMS: 4. 87 nm and < 10 nm Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 4" diameter + 0. 5 mm x 0. 525 + 0. 025 mm th Orientation: (100) + 0.