Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>"> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>"> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>"> GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 01 Non REO Impurity <0 – surdyk.pl

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GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 01 Non REO Impurity <0

$327.18

Quantity
Description

01 Non REO Impurity <0

2500 ~ 3500

Capable for KSL-1650X-GS65 furnace

Surface Quality: 80/50

FKM is also suitable for high vacuum applications

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 01 Non REO Impurity <0GaP single crystal wafer, Size: 2" diameter(0. 15mm) x 0. 45mm(0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>

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