Graphene film on Ni/SiO2/Si 100mm dia, High Purity Chemical A-Z 5mm Belt height 4mm Tooth

5mm Belt height 4mm Tooth depth 3mm

5mm(D) x 5mm(H)

Part Number EQ-DW0125x65

Orientation:   (0001) +/- 1

with no differences other than color

Graphene film on Ni/SiO2/Si 100mm dia, High Purity Chemical A-Z 5mm Belt height 4mm ToothGraphene films are grown directly on a Ni SiO2 Si deposited on an oxidized silicon wafer usinga CVD process. Specifications: Research Grade , about 90 % useful area Wafer Size: 100 mm diameter Growth Method: Chemical Vapor Deposition (CVD) Technique Film thickness: 1 10 monolayer thick Graphene film is multilayer with thickness varying in the range 1 10 layers; Graphene layers are aligned relative to each (graphite like A B stacking ) other as