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VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon Note: 110V power cord was
VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon Note: 110V power cord was
$290.20
Description
Note: 110V power cord was included for immediate use
998 alumina tube can be used at operating temperatures to 1800 oC in both oxidizing and reducing atmospheres
The maximum temperature is 100ºC
you may section multi-sample in one time (click pic left to learn how)
Size for one piece
VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon Note: 110V power cord wasInP single crystal wafer Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Un doped Conducting type: S C Polish: Two sides polished Resistivity: (2. 48 3. 34)10^ 1 ohm. cm Mobility: 4250 4340cm^2 V. S EPD: <5000 cm^2 Carrier Concerntration: (4. 34 5. 91) ^15 cmE 3
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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