Semi-Insulating GaN Template on Sapphire (0001),3"x 0.5mm,1sp GaN Film:5um Sliding Furnace Grid Content (sieve with 325

Grid Content (sieve with 325 grid)

Other sizes (e

Orientation:   (100) +/- 1 degree

02 Ni + Mn + Co (wt%) 58

a vacuum oven or a glove box to avoid degradation

Semi-Insulating GaN Template on Sapphire (0001),3"x 0.5mm,1sp GaN Film:5um Sliding Furnace Grid Content (sieve with 325GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Semi Insulating GaN Epitaxial Template on Sapphire (C plane) Sizes: 3 Round Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Conduction Type: n type,undoped