Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) please choose anti-corrosive vacuum gauge

please choose anti-corrosive vacuum gauge ( click pic below left 2 )

Laser Mark: none

One 24VDC pump is included (Since Aug 2017)

It is not suggested

Mullite tube can be used up to 1650 oC in both oxidizing and reduce atmospheres

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) please choose anti-corrosive vacuum gaugeSingle crystal Si Conductivity: N type ( P doped) Resistivity: 0. 1 1 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) + 0. 5 Deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01