+ 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 please select the item in – surdyk.pl

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InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 please select the item in

$966.00

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9E4 / cm 2

System Compatibility For MTI furnaces with 518P

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InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 please select the item in2" InSb wafer (N type, undoped) Size: 49 mm dia x 0. 5mm thick Orientation <111> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2

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