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Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT PID automatic control via solid-state
Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT PID automatic control via solid-state
$17.52
Description
PID automatic control via solid-state relay with 30 steps programmable
Works with all battery chemistries (NiCd
Material Information Materials: Silicone
4840 °F)
EPD: < 5000/cm^2
Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT PID automatic control via solid-stateSpecifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1,000 ohm cm Size: 10 x 10 x 0. 5mm Orientation: (111) Polish: one side polished Surface roughness: < 5A Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT PID automatic control via solid-state){kind=link}
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