GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP Prismatic Cell Working temperature: 1700°C (in air)

Working temperature: 1700°C (in air)  Max

pic 1                         pic 2                          pic 3                       Warranty 12 months

Purity:                         99

Compliance  CE Certified Warranty One year limited with lifetime support

This aluminum foam has the advantages of low density

GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP Prismatic Cell Working temperature: 1700°C (in air)GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5 x 5 x 0. 35 mm Polishing: one side polished Doping: Te doped Conductor type: N type Carrier Concentration: (3. 04 5. 98) x 10^17 cm^3 Mobility: (3330 3850) cm^2 V. S Resistivity: (3. 14 5. 34) E 3 ohm cm EPD: < 5000 cm^2 Note: EPI polishing RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces