Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick Ba0.5Sr0.5TiO3 Edge Orientation: <100> +/-1 Deg

Edge Orientation:   <100> +/-1 Deg with 4mm Length

Unit price is for per ft

and CR2450 coin cells

Capable for KSL-1650X-GS65 furnace

Resistivity:                   > 1000 ohm-CM

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick Ba0.5Sr0.5TiO3 Edge Orientation: <100> +/-1 DegSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation. Materials: Silicon on Sapphire Silicon EPI Layer: Silicon