Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm Thermocouples The adhesion of the surface

The adhesion of the surface of the target substrate to graphene plays an important role in successful graphene transfer

May need a screwdriver to help open the AL can

building materials

Avoid operation with no workpieces and/or overpressure to prevent damage to the die

Package included One KF25 quick Disconnect flange set

Thermal Oxide Wafer:300nm SiO2 Layer on Si (100)100mm diax0.5 mm t,P type, 1SP R:0.001-0.005 ohm.cm Thermocouples The adhesion of the surfaceThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 100mm Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: R: 0. 001 0. 005ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 100mm+ 0. 5 mm x 0. 5 mm Orientation: (100) + 0. 5o Polish: