Al2O3- Sapphire Wafer, C-plane (0001),10x10x1mm, 2 SP - ALC101010S2 Nano Related products

Related products

The fully diamond sintered blade is suitable for low speed cutting ( under 3000 RPM) of oxide single crystals or any brittle crystal

Specifications Material The case and cap are made of  Nickel-plated A3 steel

0% Yittrium stablized ZrO2)

Diameter: 100mm+/-0

Al2O3- Sapphire Wafer, C-plane (0001),10x10x1mm, 2 SP - ALC101010S2 Nano Related productsFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 1 mm thick Orientation: <0001> + 0. 5o Polished surface: Substrate surface is EPI polished via a special CMP procedure with RA < 5 A 2 sides polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer