Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1 High-Throughput Coating 5V) due to the passivation

5V) due to the passivation of cladding by electrolyte component (especially LiPF6 based electrolyte system) to form a layer of AlF3

3  Pressure

it is suggested to use milling balls with a diameter of less than 10mm

Specifications:

A: Support Plate Thickness: 10mmB

Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1 High-Throughput Coating 5V) due to the passivationFeatures: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Wafer size: 1" dia x 0. 5 mm thickness (0001) C plane orientation + 0. 5 Deg Polished surface: One side epi polished by special CMP technology Surface roughness: Ra < 5 A ( by AFM) Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal