Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods Component:

Component:

Surface roughness:        Ra < 10 A ( by AFM)

The movement speed of the plunger: 150 mm/min (Max) 0

Crystal Purity

ID:      52 mm

Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods Component:Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other