Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated Electrode

Ge Substrate (111) 10x10x 0.5 mm, 2 SP, Sb-doped, 0.005-0.01 Ohm.cm - GESbc101005S2R0005 Coated ElectrodeSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: Two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Working Temperature:    < 50°C

Aluminum 99%

no guaranty for the other brand crimper

Crystal Purity: >99

Oxygen free copper gasket for high vacuum sealing of 61mmOTF-1200X-HP-30

Polishing:                 two side polished

Cu <111> coated Si Wafer (4 inch size)

Borofloat ( Corning Pyrex 7740 Equvilent Glass )

Application Notes Replace tube for MTI tube furnaces Operating from 1600oC to 1750oC

Power Extension One extension socket (Max power 1500W) is installed in the glove box main chamber

This system provides most applications in battery and supercapacitor testing fields such as electrode materials research

(may the features only in the optional bar)