Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon Ingestion-build-232773 at a pitch not greater

at a pitch not greater than 10 degrees to the horizontal

The guidance in BS 8900-1 is designed to help organisations develop an approach to sustainable development that will continue to evolve and adapt to meet new and continuing challenges and demands

Who is BS EN 60544-2- Effects of ionizing radiation on insulators for

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This Technical Report (TR)

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon Ingestion-build-232773 at a pitch not greater1 Scope This International Standard specifies a secondary ion mass spectrometric method using magnetic sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single crystal, poly crystal, or amorphous silicon specimens with boron atomic concentrations between 1 1016 atoms cm3 and 1 1020 atoms cm3, and to crater