Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick Pellet Presses 800ºC < 8hrs @ 400W

800ºC < 8hrs @ 400W (Air

Operating Temperature 1200ºC Application Notes Vacuum pressures may only be safely used up to 1000°C

Polished: One  side  polished

High optical uniformity

A cost-effective

Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick Pellet Presses 800ºC < 8hrs @ 400WSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation. Materials: Silicon on Sapphire Silicon EPI Layer: Silicon